EPC2110 - Dual Enhancement Mode GaN Power Transistor

VDS, 120 V
Dual FET, Common Source
RDS(on), 110 mΩ
ID, 3.4 A
Pulsed ID, 20 A
RoHS 6/6, Halogen Free

EPC2110 Enhancement Mode GaN Power Transistor
Die Size: 1.35 mm x 1.35 mm


  • DC-DC Converters
  • Wireless Power Transfer
  • Synchronous Rectification


  • Higher Switching Frequency – Lower switching losses, lower parasitic inductance, and lower drive power
  • Higher Efficiency – Lower conduction and switching losses, zero reverse recovery losses
  • Smaller Footprint - Higher power density, low inductance package
Status: Active
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