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EPC2219: 65 V, 0.5 A Enhancement-Mode GaN Power Transistor
V
DS
, 65 V
R
DS(on)
, 3300 mΩ
I
D
, 0.5 A
Pulsed I
D
, 0.5 A
AEC-Q101 Qualified
Die Size: 0.9 mm x 0.9 mm
Applications
Lidar/Pulsed Power Applications
High-speed Gate Driving
Wireless Power Transfer
Synchronous bootstrap
Class D Audio
Benefits
Ultra High Efficiency
Ultra Low Q
G
Ultra Small Footprint
Status:
Preferred
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EPC2219 Datasheet
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Product Change Notice
PCN210701 - Manufacturing Site Alternate - Assembly Back End Tape and Reel at Ardentec
PCN210301 - Manufacturing Site Alternate - Assembly WLCSP Tape and Reel at Chipbond
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