EPC2219: 65 V, 0.5 A Enhancement-Mode GaN Power Transistor

VDS, 65 V
RDS(on), 3300 mΩ
ID, 0.5 A
Pulsed ID, 0.5 A
AEC-Q101 Qualified

EPC2219 Enhancement Mode GaN Power Transistor
Die Size: 0.9 mm x 0.9 mm


  • Lidar/Pulsed Power Applications
  • High-speed Gate Driving
  • Wireless Power Transfer
  • Synchronous bootstrap
  • Class D Audio


  • Ultra High Efficiency
  • Ultra Low QG
  • Ultra Small Footprint
Status: Preferred
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