EPC23101: 100 V, 65 A ePower™ Chipset

Pairs with EPC2302 to form a Power Stage up to 65 A
Integrated Half Bridge Driver, Level Shift,
Bootstrap, and High Side FET
Power Stage Load Current (1 MHz), 65 A
Maximum Input Voltage, 100 V

EPC23101 GaN PowerIC


  • Integrated high side eGaN® FET with internal gate driver
  • High Side FET RDSon, 3.3 mΩ
  • Gate driver output to drive external low side eGaN FET
  • 5 V external bias supply
  • Independent high side and low side control inputs
  • 3.3 V or 5 V CMOS input logic levels
  • High switching frequency, up to 3 MHz
  • Robust level shifter operating for hard and soft switching conditions
  • False trigger immunity from fast switching transients
  • Synchronous charging for high side bootstrap supply
  • Undervoltage lockout for internal high side bias supplies
  • Chipset of compatible high and low side devices in QFN packages with optimized pinouts between the two devices (See EPC2302)
  • Thermally enhanced package with exposed top (Rthjc = 0.4 degC/W) & wettable flank


  • High-frequency DC-DC Converters
    • Buck, Boost, Half Bridge, Full Bridge, LLC Converters
  • BLDC Motor Drives
    • Single-Phase and Three-Phase Motor Drive Inverter
Status: Engineering
Engineering devices, designated with an ENG* suffix at point of purchase, are on engineering status and should not be used for reliability stress testing or other qualification testing without contacting your local field application engineer for the latest status.
Ask and EPC Engineer a Question FAQ

Have a question about EPC eGaN FETs and ICs?
Ask a GaN Expert

Evaluation Boards

Start your design today with these low cost evaluation options:

EPC90142 100 V, 65 A half-bridge evaluation $156.25
EPC9170 2 kW 48 V/14 V Bi-directional Evaluation Board $498.00
EPC9173 35 ARMS 3-Phase BLDC Motor Drive Reference Design $900.00