EPC2801 - Enhancement Mode Power Transistor

VDS, 100 V
RDS(on), 7 mΩ
ID, 25 A
High Lead Bump Finish: 95%Pb/5%Sn

EPC2801 Enhancement Mode GaN Power Transistor
Die Size: 4.1 mm x 1.6 mm


  • High Speed DC-DC Conversion
  • High Frequency Hard Switching and Soft Switching
  • Class D Audio


  • Higher Switching Frequency – lower switching losses and lower drive power
  • Higher Efficiency – lower conduction and switching losses, zero reverse recovery losses
  • Smaller Footprint - Higher power density
Device is Obsolete
Contact us at [email protected].
For the lead free version of this device, please see EPC2001C


Evaluation Boards

Quality & Reliability

Design Resources

Application Notes

Design Examples

Device Models

EPC2001 models are parametrically representative for EPC2801