EPC8007 - Enhancement Mode Power Transistor
Fast Just Got Faster

VDS, 40 V
RDS(on), 160 mΩ
ID, 3.8 A
Pulsed ID, 6 A
RoHS 6/6, Halogen Free

EPC8007 Enhancement Mode GaN Power Transistor
Die Size: 2.05 mm x 0.85 mm


  • Ultra High Speed DC-DC Conversion
  • RF Envelope Tracking
  • Wireless Power Transfer
  • Game console and industrial movement sensing (LiDAR)


  • Higher Switching Frequency – lower switching losses and lower drive power
  • Higher Efficiency – lower conduction and switching losses, zero reverse recovery losses
  • Smaller Footprint - Higher power density
Status: Obsolete
Use EPC8004 for new designs
Ask and EPC Engineer a Question FAQ

Have a question about EPC eGaN FETs and ICs?
Ask a GaN Expert