EPC8009 - Enhancement Mode Power Transistor
Fast Just Got Faster

VDS, 65 V
RDS(on), 130 mΩ
ID, 4 A
Pulsed ID, 7.5 A
RoHS 6/6, Halogen Free

EPC8009 Enhancement Mode GaN Power Transistor
Die Size: 2.05 mm x 0.85 mm


  • DC-DC Converters
  • RF Envelope Tracking
  • Wireless Power Transfer
  • Game console and industrial movement sensing (LiDAR)


  • Higher Switching Frequency – lower switching losses and lower drive power
  • Higher Efficiency – lower conduction and switching losses, zero reverse recovery losses
  • Smaller Footprint - Higher power density
Status: Active

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