DC-DC Converter Evaluation Boards
EPC9018: 12 V – 1.2 V
EPC9019: 48 V – 12 V eGaN® power transistors continue to raise the bar for power conversion performance. Fourth generation eGaN FETs range from 30 V to 200 V and significantly widen the performance gap between the aging power MOSFET and gallium nitride-based transistors. Lower on-resistance, lower capacitance, higher current, and superior thermal performance enable power converters with greater than 98% efficiency.
- Lower On-resistance (RDS(on))
The new family of eGaN FETs cuts on-resistance, (RDS(on)), in half, enabling high current, high power density applications.
- Improved Figure of Merit (FOM)
The latest generation of eGaN FETs cuts the hard-switching FOM in half compared with the previous generation for improved switching performance in high frequency power conversion applications.
- Extended Voltage Range
Extending the performance benefits of GaN to 30 V enables higher power DC-DC converters, Point-of-Load (POL) converters, synchronous rectifiers for isolated power supplies, PCs, and servers.