GaN Talk Blog

The digital world is evolving faster than ever. We are in the middle of a new AI industrial revolution, with data centers turning into AI factories, high-density, purpose-built facilities to create intelligence at massive scale. Artificial intelligence is no longer just a software revolution. It is rapidly becoming an infrastructure revolution. This shift in computing paradigms is profound: humans are no longer the only ones interacting with AI; rather, increasingly sophisticated agentic AI models are talking to other AI agents, coordinating tasks, reasoning autonomously, and working with extraordinarily long token sequences.

In this video, we’ll explore the EPC90167, a half-bridge evaluation board designed for the 40 V EPC2366 eGaN FET. This compact 2.5 by 2 inch board integrates the gate driver, dead-time generation, polarity control, and all key passive components, so you can quickly evaluate high-efficiency, high-frequency power conversion. We’ll walk through its main features, operating modes, and test points, and see how easily it can be configured as a buck or boost converter for modern motor drives, DC-DC converters, and AI power applications.

The full article was originally published in EPDT

The history of power electronics has been a predictable cadence of material limits, architectural shifts, and a new semiconductor platform resetting expectations. Today that transition is happening again, this time with gallium nitride (GaN).

In this video, Marco Palma and Andrea Nicotera, both from EPC, present experimental tests on two high‑performance reference designs: the EPC91107 four‑level flying capacitor totem‑pole PFC and the EPC91110 four‑level ISOP LLC resonant DC‑DC converter. Filmed at the Power Electronics Innovation Center, Politecnico di Torino, they demonstrate a complete 5.5 kW AC‑to‑50 V DC conversion chain, highlighting the test setup, measurement equipment, and the system’s excellent efficiency at high power levels.

This video is a review of the EPC91122, a compact GaN-based three-phase BLDC motor drive inverter optimized for humanoid robot joints and other space-constrained actuators. Built around the EPC33110 co-packaged GaN module, it combines power stage, gate drivers, sensing, control, and communication on a single circular board. With an onboard STM32 microcontroller, magnetic encoder, precise current and voltage sensing, and RS‑485/JTAG interfaces, it delivers high efficiency, fast dynamic response, and robust performance for advanced robotics.

By: Maurizio Di Paolo Emilio, Contributing Editor at Data Centre Digest

Artificial intelligence workloads are rapidly reshaping data center power architectures. Conventional server infrastructure was not originally designed to sustain today’s extreme compute density requirements. As a result, modern facilities increasingly resemble “AI factories,” where maximizing computational throughput per rack is a primary objective.

GaN is going mainstream in power electronics for AI, robotics, and cars. At APEC 2026, EPC's Nick Cataldo discusses GaN system-level value and cost advantages.

Abstract: Join us to examine how GaN is reshaping power electronics. GaN is not just a substitute for MOSFET; it is an enabler that allows engineers to rethink the architectures once limited by system constraints. In the automotive sector particularly, specifically within 48V architectures, GaN technology drives up to 15% improvement in fuel efficiency, and balances between reliability, compatibility, and overall cost.

High-performance AI clusters and humanoid robots share a critical engineering challenge - namely the need for immense current within compact, thermally-constrained enclosures. At traditional low voltages, power distribution has hit a physical ceiling, where excessive I2R losses and connector bulk create unsustainable thermal stress. To solve this, industry architectures are converging on a 48V nominal power distribution backbone (peaking at 58V).

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