GaN Talk Blog

The silicon power MOSFET has been the most important device for changing low- and medium-voltage power for more than forty years. It was the best choice for everything from consumer electronics and telecom infrastructure to industrial power supplies and automotive systems because it was easy to use, had a well-established manufacturing ecosystem, and its performance was easy to predict. Architectural improvements that have been made over time, such as moving from planar to trench and superjunction designs, have steadily lowered on-resistance while keeping voltage capability.

AI’s rapid rise and the widespread rollout of data centers needed to sustain its growth are fundamentally changing the way data centers are designed—not only in terms of compute density and cooling requirements, but also in how electrical power is delivered. Racks that once drew tens of kilowatts are now approaching hundreds of kilowatts, with megawatt-scale AI compute clusters no longer a distant target. In this context, traditional power architectures based on 415/480 VAC distribution and low-voltage DC buses are becoming increasingly inefficient, bulky, and expensive to scale.

Humanoid robots are designed to mimic human movement and are seeing strong market growth across a wide variety of applications. Motor control forms a key design aspect in robotics, and in this article, we summarize the basic power architecture and the requirements for the power electronics that form the core components, along with examples of solutions available from Efficient Power Conversion Corporation (EPC).

Power Electronics News
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When wide-bandgap semiconductors entered the market, the areas in which they operated were pretty well defined. SiC would challenge silicon at voltages above 600V, and GaN would compete with silicon in applications from around 100V to 600V.

Power Systems Design
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Alex Lidow, CEO and co-founder of Efficient Power Conversion (EPC), talked with Ally Winning, Editor at Power Systems Design, about EPC's strategic agreement with Renesas in a recent interview. The interview looked at why the deal was made, how important it is to have a second source, and how certain eGaN devices help set de facto standards in the low-voltage GaN market.

Recent advancements in gallium nitride (GaN) power devices demonstrate a substantial expansion of their operational range into low-voltage applications under 40 V. Silicon MOSFETs have historically dominated this voltage range due to their good conduction performance, well-understood manufacturing processes, and proven reliability.

PCIM Mesago
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The professional audio industry has traditionally prioritized reliability, predictable lifecycles, and long-term product stability when evaluating new semiconductor technologies. As a result, emerging device platforms are typically introduced only after their electrical performance and robustness are well understood.

Against this backdrop, Markus Bätz, CEO and co-founder of Innosonix, made the decision to transition from silicon to gallium nitride (GaN) power devices as early as 2020 - several years before GaN became widely discussed within professional audio circles.

According to a research report by Goldman Sachs, global shipments of humanoid robots are projected to reach approximately 15,000 to 20,000 units by 2025, with a compound annual growth rate (CAGR) exceeding 40% over the next decade. In this technological race from science fiction to reality, the high-frequency, miniaturized, and thermally managed capabilities of motor drives have become key factors for success. This article will outline the power architecture of humanoid robots and the technical requirements of their core power electronic components, illustrating this with GaN solutions provided by industry-leading Efficient Power Conversion Corporation (EPC) .

The original article is written in Simplified Chinese.
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A partnership with Renesas, which offers high-voltage GaN, suggests an opportunity for EPC to broaden its low- and medium-voltage portfolio.

Gallium Nitride (GaN)—a wideband gap semiconductor alongside silicon carbide (SiC)—has emerged as a superior alternative to silicon in next-generation power electronics. Yole—a renowned market research firm—forecasts $ 3 billion in 2030 for the GaN power market, with a remarkable compound growth of 42% between 2024 and 2030, as a result of OEM uptake, consumer maturity, and NVIDIA-supported AI datacenter business expansion.

Power Electronic News
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Efficient Power Conversion (EPC), a specialist in gallium nitride (GaN) technology, has announced the start of mass production of the EPC2366 (40 V), the first device based on its seventh-generation (Gen 7) eGaN platform. Targeting high–power-density applications such as high-density DC-DC conversion, AI server power supplies, and advanced motor drives, EPC positions the EPC2366 as a key enabler for next-generation power systems.

MakerPRO
The original article is written in Simplified Chinese.
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