EPC has developed the world’s first enhancement mode Gallium Nitride devices to be offered on the market. Our eGaN® FETs provide designers employing any power conversion topology; full bridge, half bridge, buck converter, boost converter, PFC, flyback converter, forward converter, or LLC converter the opportunity to achieve significant performance enhancements compared with silicon power MOSFETs. In order to make EPC’s eGaN FETs easy to use, we developed devices that behave very much like silicon power MOSFETs. User friendly tools make a significant impact in how easy it is to apply a new type of device. EPC has developed a comprehensive list of third-order device models so engineers can quickly design and implement circuits with minimum waste.