News

Sign up today to get the latest news and updates from EPC on new product announcements, applications work, and much more. Sign up for EPC email updates or text "EPC" to 22828.

EPC Introduces 40 V Gallium Nitride Power Transistor 8 Times Smaller Than Equivalently Rated MOSFETS

Categories: Press Releases
EPC Introduces 40 V Gallium Nitride Power Transistor 8 Times Smaller Than Equivalently Rated MOSFETS

EPC2049 GaN power transistor offers power systems designers a 40 V, 5 mΩ power transistor about 8 times smaller than equivalently rated silicon MOSFETs for point of load converters, LiDAR, and low inductance motor drive.

EL SEGUNDO, Calif. — December 2017 — EPC announces the EPC2049 power transistor for use in applications including point of load converters, LiDAR, envelope tracking power supplies, class-D audio, and low inductance motor drives. The EPC2049 has a voltage rating of 40 V and maximum RDS(on) of 5 mΩ with a 175 A pulsed output current.

The chip-scale packaging of The EPC2049 handles thermal conditions far better than the plastic packaged MOSFETs since the heat is dissipated directly to the environment with chip-scale devices, whereas the heat from the MOSFET die is held within a plastic package. It measures a mere 2.5 mm x 1.5 mm (3.75 mm2). Designers no longer have to choose between size and performance – they can have both!

“The EPC2049 demonstrates how EPC and gallium nitride transistor technology is increasing the performance and reducing the cost of eGaN® devices. The EPC2049 is further evidence that the performance and cost gap of eGaN technology with MOSFET technology continues to widen.” said Alex Lidow, EPC’s co-founder and CEO.

Price and Availability

The EPC2049 eGaN FET is priced for 1K units at $2.19 each and is available for immediate delivery from Digi-Key.

About EPC

EPC is the leader in enhancement-mode gallium nitride based power management technology. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote imaging and sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. EPC also has a growing portfolio of eGaN-based integrated circuits that provide even greater space, energy, and cost efficiency.

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact

Efficient Power Conversion Corporation Joe Engle, 310.986.0350 joe.engle@epc-co.com