EPC2102 - Enhancement Mode GaN
Power Transistor Half Bridge

V_DS, 60 V
R_DS(on), 4.9 mΩ
I_D, 30 A
Pulsed I_D, 220 A
RoHS 6/6, Halogen Free

Die Size: 6.05 mm x 2.3 mm

Applications

DC-DC Converters

Benefits

Higher Switching Frequency – Lower switching losses, lower parasitic inductance, and lower drive power
Higher Efficiency – Lower conduction and switching losses, zero reverse recovery losses
Smaller Footprint - Higher power density

Status: New Device Offered (NDO)
The GaN Experts recommend EPC2619 for new designs NDO Note: This is an earlier generation device, and although it is fully supported, the recommended device will provide better price and performance in most applications.