What would you design if you had the “ideal” power switch?
GaN transistors and integrated circuits are significantly faster and smaller than the best silicon MOSFETs. Today, eGaN® FETs and ICs are 5 to 50 times better than the silicon state-of-the-art. This large jump in performance has led to several new applications that were not possible until the availability of GaN technology. eGaN FETs are still several orders of magnitude away from GaN’s theoretical performance limits. There is a learning curve ahead that only widens the performance gap between GaN and silicon, and continues to enable new applications and transform entire end markets.
Power Switch Wish List:
- Lower On Resistance
- Less Capacitance
Lower RDS(on) and Faster…It starts with a superior conduction mechanism:
Superior conduction starts with the confinement of electrons into a two dimension electron gas (2DEG) leads to high conductivity and high velocity. This is a property of eGaN FETs.
Less Capacitance…Superior Figures of Merit give unprecedented: performance:
eGaN FETs offer designers best in class Figures of Merit versus MOSFET in both hard switching and soft switching applications.
Smaller Size…Think Big – Buy Small!
Board space is very expensive real estate. eGaN FETs are provided in a low inductance, low resistance, small, low cost LGA package.
GaN (gallium nitride) has emerged as a displacement technology to the venerable, but aged, silicon solutions that will allow us to stay ahead of our demand for more and more efficient power.