EPC2305: 150 V, 3 mΩ Enhancement Mode GaN Power Transistor

VDS, 150 V
Max RDS(on), 3 mΩ
ID, 133 A
Pulsed ID, 329 A

EPC2305 Enhancement Mode GaN Power Transistor
Package Size: 3 mm x 5 mm

Applications

  • High frequency DC-DC
  • AC/DC chargers and adaptors
  • BLDC motor drive
  • eMobility motor drive
  • Solar optimizer & MPPT
  • Class-D audio
  • Fast-chargers for phone, notebook, gaming PC
  • DC-DC and chargers for eMobility, power tools, home robotics

Benefits

  • Ultra-high efficiency
  • No reverse recovery (QRR)
  • Ultra-low QG
  • Small footprint
  • Excellent thermal performance
Status: Preferred

Datasheet

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