Power Inverter Applications

Power Inverter Applications

Power Inverter Applications

eGaN® FETs offer significantly lower capacitance and inductance and zero QRR in a smaller device for a given RDS(on) than comparable MOSFETs. This reduces switching losses resulting in higher efficiency and/or higher switching frequency. Photo-Voltaic (PV) inverter size and cost are dominated by thermal management and passive elements used for bulk energy storage and filtering. Using eGaN FETs to increase efficiency and/or increase switching frequency can reduce the size and cost of the system.

Power Inverter Reference Material

Concept for multi-level inverter

  • Multi-level inverter using EPC2010C, 200 V eGaN FETs
  • Inverter efficiency estimated at 98% at 150 kHz
Multi-level Inverter

Recommended Devices for Power Inverter Designs

Part
Number 		Configuration VDS Max
RDS(ON)
(mΩ)
(VGS = 5 V) 		QG
typ
(nC) 		QGS
typ
(nC) 		QGD
typ
(nC) 		QOSS
typ
(nC) 		Max. Peak Pulsed ID(A)
(25°C, Tpulse = 300µs) 		Package
(mm) 		Half-Bridge
Development
Boards
EPC2047 Single 200 10 8.2 2.9 1.8 60 160 BGA 4.6 x 1.6 EPC9081
EPC2034C Single 200 8 11.4 3.8 2.1 95 213 BGA 4.6 x 2.6 EPC9048C
EPC2046 Single 200 25 2.9 1 0.6 22 55 BGA 2.77 x 0.95 EPC9079
EPC2010C Single 200 25 3.7 1.3 0.7 40 90 LGA 3.6 x 1.6 EPC9003C
EPC2019 Single 200 50 1.8 0.60 0.35 18 42 LGA 2.8 x 0.95 EPC9014
EPC2012C Single 200 100 1.0 0.3 0.2 10 22 LGA 1.7 x 0.9 EPC9004C
EPC2050 Single 350 65 3.4 1.4 0.4 33 26 BGA 1.95 x 1.95 EPC9084

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