Power Inverter Applications

eGaN^® FETs offer significantly lower capacitance and inductance and zero Q_RR in a smaller device for a given R_DS(on) than comparable MOSFETs. This reduces switching losses resulting in higher efficiency and/or higher switching frequency. Photo-Voltaic (PV) inverter size and cost are dominated by thermal management and passive elements used for bulk energy storage and filtering. Using eGaN FETs to increase efficiency and/or increase switching frequency can reduce the size and cost of the system.

Power Inverter Reference Material

Application Note - eGaN^® FETs for Photo-Voltaic Inverter Applications

Concept for multi-level inverter

Multi-level inverter using EPC2010C, 200 V eGaN FETs
Inverter efficiency estimated at 98% at 150 kHz

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Recommended Devices for Power Inverter Designs

Part Number	Configuration	V_DS	Max R_DS(ON) (mΩ) (V_GS = 5 V)	Q_G typ (nC)	Q_GS typ (nC)	Q_GD typ (nC)	Q_OSS typ (nC)	Max. Peak Pulsed I_D(A) (25°C, Tpulse = 300µs)	Package (mm)	Half-Bridge Development Boards
EPC2034C	Single	200	8	11.4	3.8	2.1	95	213	BGA 4.6 x 2.6	EPC9048C
EPC2215	Single	200	8	13.6	3.3	2.1	69	162	BGA 4.6 x 1.6	EPC9099
EPC2207	Single	200	22	4.5	1.3	0.7	23	54	BGA 2.9 x 0.9	EPC90124
EPC2010C	Single	200	25	3.7	1.3	0.7	40	90	LGA 3.6 x 1.6	EPC9003C
EPC2019	Single	200	50	1.8	0.60	0.35	18	42	LGA 2.8 x 0.95	EPC9014
EPC2012C	Single	200	100	1.0	0.3	0.2	10	22	LGA 1.7 x 0.9	EPC9004C

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