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Radiation Performance of Enhancement-Mode Gallium Nitride Power Devices

Categories: Articles
Radiation Performance of Enhancement-Mode Gallium Nitride Power Devices

Enhancement-mode gallium nitride (eGaN®) technology enables a new generation of power converters in space operating at higher frequencies, higher efficiencies, and greater power densities than ever achievable before. eGaN devices also exhibit superior radiation tolerance compared with silicon MOSFETs.

Bodo’s Power Systems
June, 2020
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