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EPC Launches Scalable 1.5 kW 48 V/12 V DC-DC Demonstration Board Powered by Gallium Nitride (GaN) FETs for More Efficient, Smaller, Faster, Bidirectional Converters

Categories: Press Releases
EPC Launches Scalable 1.5 kW 48 V/12 V DC-DC Demonstration Board Powered by Gallium Nitride (GaN) FETs for More Efficient, Smaller, Faster, Bidirectional Converters

The EPC9137 is a two-phase 48 V – 12 V bidirectional converter that delivers 1.5 kW with 97% efficiency in small solution size for mild-hybrid cars and battery power backup units.

EL SEGUNDO, Calif.— May, 2021 — EPC announces the availability of the EPC9137, a 1.5 kW, two-phase 48 V – 12 V bidirectional converter that operates with 97 % efficiency in a very small footprint. The design of this demonstration board is scalable; that is, two converters can be paralleled to achieve 3 kW or three converters can be paralleled to achieve 4.5 kW. The board features four EPC2206 100 V eGaN® FETs and is controlled by a module that includes the Microchip dsPIC33CK256MP503 16-bit digital controller.

By 2025, one of every 10 vehicles sold worldwide is projected to be a 48 V mild hybrid. 48 V systems boost fuel efficiency, deliver four times the power without increasing engine size, and reduce carbon-dioxide emissions without increasing system costs.  These systems will require a 48V – 12V bidirectional converter, with power ranging from 1.5 kW to 6 kW. The design priorities for these systems are size, cost, and high reliability.

EPC eGaN FETs can operate with 97% efficiency at 250 kHz switching frequency, enabling 800 W/phase compared to silicon-based solutions, which are limited to 600 W/phase due to the limitation on the inductor current at 100 kHz maximum switching frequency. By using GaN FETs, it is possible to reduce the number of phases from five to four for a 3.5 KW converter while increasing efficiency.  The efficiency of a four-phase GaN converter operating at 250 kHz is 1.5% higher than a five-phase silicon MOSFET-based converter operating at 100 kHz.

Overall, the DCDC converter is three times faster, greater than 35% smaller and lighter, and offers greater than 1.5% higher efficiency compared to silicon MOSFET solutions. And the overall system cost is less. Additionally, the excellent efficiency and thermal performance of GaN FETs enables air cooling instead of water cooling and the small size of the GaN FETs strongly reduce heat-dissipating aluminum housing for additional system cost saving.

“eGaN® FETs provide the fast switching, small size, and high efficiency needed to further reduce the size and weight of 48 V – 12 V automotive power system converters. The demonstrated superior reliability of GaN FETs make them ideal for this very demanding application,” said Alex Lidow, CEO of EPC. “The EPC9137 is an ideal example of the capabilities of GaN FETs to increase frequency and efficiency to allow smaller inductance for less phases and higher power density.”

Price and Availability

The EPC9137 demonstration board is priced at $510.72/each and is available for immediate delivery from Digi-Key at

About EPC

EPC is the leader in enhancement mode gallium nitride (eGaN®) based power management. eGaN FETs and integrated circuits provide performance many times greater than the best silicon power MOSFETs in applications such as DC-DC converters, remote sensing technology (lidar), motor drives for eMobility, robotics, and drones, and low cost satellites

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press contact: Efficient Power Conversion:  Renee Yawger tel: +1.908.475.5702 email: [email protected]