EPC9010C - Development Board

EPC9010C : 100 V Half-Bridge Development Board

The EPC9010C development board has a 100 V maximum device voltage, 7 A maximum output current, in a half-bridge topology with onboard gate drives, featuring the EPC2016C enhancement-mode (eGaN®) field effect transistor (FET)

The purpose of this development board is to simplify the evaluation process of the EPC2016C eGaN FET by including all the critical components on a single board that can be easily connected into any existing converter.

Status: Obsolete
The GaN Experts recommend EPC9092 for new designs
Ask and EPC Engineer a Question FAQ

Have a design question?
Ask a GaN Expert

EPC9010C Waveforms
Waveforms for EPC9010C operation as a 48 V to 5 V / 7 A (1000 kHz) buck converter
CH1: VPWM Input voltage – CH2: (IOUT) Switch node current – CH4: (VOUT) Switch node voltage.
EPC9010C Parameters Table
(1) Maximum input voltage depends on inductive loading, maximum switch node ringing must be kept under 100 V for EPC2016C.
(2) Maximum current depends on die temperature – actual maximum current is affected by switching frequency, bus voltage and thermal cooling.
(3) Limited by time needed to ‘refresh’ high side bootstrap supply voltage.

Quick Start Guide

Featured Product

Support Files

Design Resources

Application Notes

Training Videos