EPC90132: 40 V, 25 A Development Board
The EPC90132 development board is a 40 V maximum device voltage, 25 A maximum output current, half bridge with onboard gate drives, featuring the EPC2055 enhancement mode (eGaN®) field effect transistor (FET).
The EPC90132 development board is 2” x 2” and contains two EPC2055 eGaN FETs and one EPC2038 eGaN FET in a half bridge configuration using the uPI Semiconductor uP1966A gate driver.
To simplify the evaluation process of the EPC2055 GaN FET, all the critical components and layout for optimal switching performance are implemented. Video: How to Turn an EPC Development Board into a Prototype