EPC2010 - Enhancement Mode Power Transistor

VDS, 200 V
RDS(on), 25 mΩ
ID, 12 A
RoHS 6/6, Halogen Free

EPC2010 Enhancement Mode GaN Power Transistor
Die Size: 3.6 mm x 1.6 mm

Applications

  • High Speed DC-DC Conversion
  • High Frequency Hard Switching and Soft Switching
  • Class D Audio

Benefits

  • Higher Switching Frequency – lower switching losses and lower drive power
  • Higher Efficiency – lower conduction and switching losses, zero reverse recovery losses
  • Smaller Footprint - Higher power density
Status: Obsolete
Use EPC2010C for new designs
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