EPC2305: 150 V, 329 A Enhancement Mode GaN Power Transistor

VDS, 150 V
RDS(on), 2.2 mΩ
ID, 102 A
Pulsed ID, 329 A

EPC2305 Enhancement Mode GaN Power Transistor
Package Size: 3 mm x 5 mm

Applications

  • High frequency DC-DC
  • AC/DC chargers and adaptors
  • BLDC motor drive
  • eMobility motor drive
  • Solar optimizer & MPPT
  • Class-D audio
  • Fast-chargers for phone, notebook, gaming PC
  • DC-DC and chargers for eMobility, power tools, home robotics

Benefits

  • Ultra-high efficiency
  • No reverse recovery (QRR)
  • Ultra-low QG
  • Small footprint
  • Excellent thermal performance
Status: Engineering
Engineering devices, designated with an ENG* suffix at point of purchase, are on engineering status and should not be used for reliability stress testing or other qualification testing without contacting your local field application engineer for the latest status.
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