EPC23104: 100 V, 15 A, QFN Package, ePower™ Stage IC

Features

• Integrated high side and low side eGaN FET with internal gate driver and level shifter
• 5 V external bias supply
• 3.3 V or 5 V CMOS input logic levels
• Independent high side and low side control inputs
• Logic lockout commands both FETs off when inputs are both high at same time
• External resistors to tune SW switching times and over-voltage spikes above rail and below ground
• Robust level shifter operating for hard and soft switching conditions
• False trigger immunity from fast switching transients
• Synchronous charging for high side bootstrap supply
• Disable input engages low quiescent current mode from V_DRV supply
• Power on reset for low side V_DD supply
• Power on reset for high side V_BOOT supply
• Active gate pull-down for HS FET and LS FET with loss of V_DRV supply
• Thermally enhanced QFN package with exposed top for low thermal resistance from junction to top-side heatsink