EPC2377: 40 V, 101 A Enhancement-Mode GaN Power Transistor

VDS, 40 V
Typ RDS(on), 0.5 mΩ
ID, 101 A
Pulsed ID, 553 A

epc2377 Enhancement Mode GaN Power Transistor
Package Size: 3.3 mm x 3.3 mm

Applications

  • High performance, high power-density
  • DC-DC conversion
  • High-frequency DC-DC converters
  • Synchronous rectifiers
  • Secondary-side synchronous rectifiers in 48 V-12 V LLC converters

Benefits

  • Ultra-low QG for high frequency
  • PQFN package with backside thermal pad
  • No reverse recovery
  • Small footprint
  • Excellent thermal performance
Status: Engineering
Engineering devices, designated with an ENG* suffix at point of purchase, are on engineering status and should not be used for reliability stress testing or other qualification testing without contacting your local field application engineer for the latest status.
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