EPC33110 – 100 V, 3-Phase ePower™ Stage for High-Density Motor Drives

Three half-bridges co-packaged with integrated gate drivers, bootstraps, and level shifters for compact, high-power-density motor control.

Maximum Input Voltage, 100 V
Typical RDS(on), 11.7 mΩ + 13 mΩ
Logic Levels, 3.3 V/ 5 V

EPC33110 ePower Stage
Package Size: 6.5 mm x 6 mm

Features

  • 3-phase co-packaged power stage: 3× gate drivers + 6× eGaN® FETs with integrated level shifters and bootstraps
  • Independent logic inputs (per half-bridge) with 3.3 V or 5 V CMOS-compatible thresholds
  • Anti shoot-through architecture; logic lockout defaults both FETs off under fault/illegal states
  • Synchronous bootstrap (high-side) charging for robust high-side drive
  • dv/dt and switching behavior tuned for motor drive operation
  • Fast shutdown function disables immediately PWM in fault condition
  • Active low Fault input
  • 100% ON capability allows over-modulation
  • Power-on reset disables outputs when VDD or VBOOT are below threshold; undervoltage lockouts on critical rails
  • False-trigger immunity for fast-switching transients; robust level shifters for hard/soft switching
  • Thermally enhanced QFN with exposed top for low thermal resistance to top-side heatsinking; wettable flanks for inline AOI

Applications

  • Motor drive inverters (BLDC / PMSM)
  • Humanoid & collaborative robots (elbow/wrist/ankle joints)
  • Miniature motors for industrial automation
  • Small-payload drones and gimbals
Status: Engineering
Engineering devices, designated with an ENG* suffix at point of purchase, are on engineering status and should not be used for reliability stress testing or other qualification testing without contacting your local field application engineer for the latest status.
Contact EPC
Ask and EPC Engineer a Question FAQ

Have a question about EPC eGaN FETs and ICs?
Ask a GaN Expert

Datasheet

Evaluation Boards

Quality & Reliability

Design Resources

Application Notes

Device Models

Design Tools