Events

Using low voltage eGaN FETs in server power supplies to increase power density

Using low voltage eGaN FETs in server power supplies to increase power density

August 5, 2025 10:00-11:30 (Beijing time) Online

Speaker:Chen Hu, Senior Field Application Engineer, EPC

The rapid development of artificial intelligence technology is driving the power consumption demand of data centers to continue to rise, which puts forward higher power density and energy efficiency requirements for power converters. The power converters in data centers usually adopt a two-stage architecture: power factor correction (PFC) circuit and isolated DC-DC converter.

The PFC circuit operates at a 240V AC input voltage and can output a 400V DC bus voltage; the subsequent DC-DC conversion stage needs to step down to 50V and ensure electrical isolation. This type of power supply system must also meet the latest specifications of the Open Compute Project ORV3 standard and meet specific form factor requirements.

In this seminar, we will share how GaN technology plays a role in data center power supplies.

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PCIM Asia

PCIM Asia

September 24 – 26, 2025 Shanghai, China

Visit EPC in Hall N5, Stand E12 at PCIM Asia in Shanghai, China. EPC is proud to showcase the industry’s most comprehensive portfolio of Gallium Nitride (GaN) power conversion solutions in real-world applications. Schedule a meeting with the GaN Experts at PCIM – send your meeting request to [email protected]

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