Meet with the GaN Experts at electronica 2026

Join EPC at electronica 2026, November 10–13, 2026, Messe München, Munich, Germany.

Explore Our Booth – Hall C6, Booth 221

Visit EPC to explore the latest eGaN® FETs, integrated power stages, and reference designs and see how GaN is moving beyond traditional power conversion into next-generation intelligent electronic systems.

Featured application areas include:

GaN for Physical AI and Robotics

EPC will showcase integrated GaN solutions for humanoid robots, drones, and other intelligent motion systems. The EPC33110, a 100 V three-phase integrated ePower™ Stage IC, enables compact, high-performance motor drives for robotic joints and drone propulsion. The new EPC33111, currently in preview, further increases integration in a compact package, while the EPC23108/09 and EPC23110/11 100 V integrated ePower™ Stage IC families are now in mass production, supporting up to 35 A and 20 A, respectively.

Motion-control platforms include the EPC91122 and EPC91132 reference designs based on the EPC33110, demonstrated in a high-torque robotic arm. A lightweight drone propulsion platform will also demonstrate the EPC33111 extreme miniaturization capability for space-constrained applications. Additional motor-drive reference designs include the EPC91121 (EPC2366), EPC91135 (EPC2376) for 150 V inverter applications, EPC9186HCx (EPC2361) for scalable high-current three-phase motor drives, EPC91124, EPC91125 based on EPC2361 and EPC2367 respectively, EPC91126 based on EPC2375, and the EPC91128/29/30/31 family based on the EPC23108/09/10/11.

EPC33111-based reference board

GaN for Efficient AI

EPC will demonstrate GaN solutions spanning the AI power-delivery chain, from 800 VDC distribution to Point-of-Load conversion. The EPC91123, a 6 kW 800 V-to-12.5 V ISOP LLC converter, demonstrates high-density intermediate-bus conversion, while EPC will also showcase a new 6 kW 800 V-to-6 V ISOP converter designed to bring high-voltage power closer to next-generation AI processors.

EPC GaN devices include EPC2305, EPC2367, EPC2361, EPC2378, and EPC2370. The EPC2370, now in mass production, is an 18 V Gen7 eGaN® FET with 0.28 mΩ RDS(on) and 101 A continuous current capability, optimized for high-current 48 V-to-6 V and 800 V-to-6 V conversion. The EPC2378, a 25 V Gen7 device with 0.41 mΩ RDS(on), is also in mass production for high-density DC-DC conversion.

Looking ahead, EPC will highlight its Gen 8 GaN power stage technology, targeting ultra-high-frequency, low-voltage power conversion. Gen 8 is designed to enable direct conversion from approximately 6.25 V to sub-1 V processor rails at multi-megahertz frequencies, to improve current density and efficiency.

GaN for Space Electronics

EPC Space will highlight radiation-hardened GaN technology for next-generation space power systems, including DC-DC converters, point-of-load (POL) and intermediate voltage regulator (IVR) applications, and space computing. In addition to a full line of discrete devices and power modules, EPC Space now offers a new line of GaN ICs, including the EPC7011 and EPC7009, as well as radiation-tolerant FETs in plastic packages.

The latest EPC7050PCSH, EPC7066PCSH, and EPC7065PCSH provide 15 V, 25 V, and 40 V operation, respectively, with up to 101 A continuous current capability and very low on-resistance. Designed for radiation-hard synchronous rectification and POL/IVR applications, these devices combine high efficiency and power density with exceptional radiation immunity.

GaN for Autonomous Machines

Autonomous machines combine advanced computing, sensing, and motion in increasingly compact platforms, making power electronics critical to every part of the system. EPC GaN technology powers the machine’s brains, muscles, and eyes—from high-performance computing and power delivery for AI processors to efficient motor drives for steering, propulsion, and actuation to compact power solutions for cameras, LiDAR, radar, and other sensing systems. Across autonomous cars, drones, delivery robots, and humanoid robots, EPC’s GaN portfolio enables higher efficiency, smaller footprints, lower weight, faster dynamic response, and greater system-level performance. By combining GaN devices, ICs, and integrated power stages across these functions, EPC provides the technology foundation for a more capable, connected, and autonomous future.

GaN for Autonomous Machines

Engage with Our Experts

Schedule a Meeting: EPC’s technical experts, including CEO Dr. Alex Lidow, will be on-site to discuss how GaN is enabling innovation across AI, humanoid robotics, autonomous machines, space electronics, and high-density power conversion. To schedule a meeting during electronica 2026, contact [email protected].

Exhibition Booth – Hall C6, Booth 221: Visit EPC’s booth to explore the company’s latest portfolio of GaN-based solutions and see how advanced eGaN® technology enables higher efficiency, greater power density, faster dynamic response, and smaller system size across next-generation electronic applications.

Visit EPC at electronica 2026 – Hall C6, Booth 221

LIVE SESSIONS Hall C6, Booth 221

Nov 10, 2.00pm – 2.30pm

Where is GaN Going

Alex Lidow, CEO, Efficient Power Conversion (EPC)

GaN Technology has evolved at a steady, but rapid pace over the last 17 years since first going into mass production. EPC has developed seven generations of discrete transistors that have surpassed MOSFETs in every technical category. In addition, GaN integrated circuits have been adopted in many applications from BLDC motor drives for robots and drones, to high DCDC converters and motor drives for satellite systems. So, what comes next?

Nov 11, 11.00am – 11.30am

Radiation-Hardened GaN: From Niche to Mainstream

Bel Lazar, CEO, EPC Space

In less than six years, EPC Space has displaced radiation-hardened silicon MOSFETs across a growing share of space power sockets. What began as a niche alternative is now a first-look technology for new designs. EPC Space estimates it has captured more than 35 percent of rad-hard power FET sockets, and nearly every new power-management design either already uses our rad-hard GaN FETs, ICs, or modules, or is actively evaluating them. More than 500,000 EPC Space devices are now on orbit in LEO, MEO, and GEO.

Nov 11, 2.00pm – 2.30pm

New 100 V half-bridge and three phase GaN ICs for Robots and Drones

Marco Palma, Vice President, Motor Drive Marketing and System Engineering, EPC

Marco Palma will present the latest advancements in EPC GaN IC technology and the new devices for motor drives in Humanoid Robots and drones. The presented devices are half-bridge powerstage ICs and a compact three-phase module. Attendees will get a sneak peek at future monolithic three-phase inverters for robotic hands and small drones.

Nov 12, 11.00am – 11.30am

Disrupting High-Voltage Applications Using Low-Voltage GaN FETs in Multi-kW Isolated Converters

Michael De Rooij, GaN Applications Fellow, EPC

Power supply demands, across applications such as AI and data servers and industrial automation, require innovative solutions to address the growing need for small size and high efficiency. Low voltage devices can shift the outcome in high voltage isolated applications and concurrently offer high power density and efficiency. The regulated ISOP configured LLC converters is one of several examples that will be presented with various configuration and topology variations for 800V/400V down to 12V/50V for power levels ranging from 1.5kW through 12kW.

Nov 12, 2.00pm – 2.30pm

Mission Profile Reliability of GaN Devices for AI Data Centers

Shengke Zhang, VP of Reliability and Global FAE, EPC

GaN offers significant performance advantages for power delivery in AI data centers. The long-term reliability of GaN devices under AI data center mission profiles is critical to their widespread adoption. This presentation assesses the dominant intrinsic wearout mechanisms in GaN and provides lifetime projections based on experimentally validated reliability models. The results demonstrate the long-term reliability of EPC’s GaN devices for AI data centers.

Exclusive Sessions

Schedule a private meeting during electronica 2026. Learn from our GaN Experts, get hands-on experience with our products, and discover strategies to optimize your power systems.

Schedule a meeting with our team of GaN Experts