Events

Tech Taipei

Thursday, August 1, 2024 9:10 AM - 9:30 PM
Tech Taipei
Location: Virtual Event

Keynote Address: Why GaN for Robotics?

As we advance towards a future where robots operate independently, gallium nitride (GaN) emerges as a transformative technology, offering excellent advantages for the motor drive systems that control the various joints in untethered robots. In this keynote we will discuss the various parts of a humanoid robot and show why GaN is the obvious power device for these specialized motor drives.

Speaker: Alex Lidow, Ph.D.

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PCIM Asia 2024

Wednesday, August 28, 2024 - Friday, August 30, 2024
PCIM Asia 2024
Location: Shenzhen, China

Visit the GaN Experts at PCIM Asia 2024

Stop by Hall 11, Stand F01 at PCIM Asia to get the latest news on GaN technology, products, and applications. Schedule a meeting during PCIM to discuss your design by sending a request to [email protected]

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26TH International Conference on Electrical Machines (ICEM)

Sunday, September 1, 2024
26TH International Conference on Electrical Machines (ICEM)
Location: Torino, Italy

Plenary: GaN Technologies for the new generation of Electric Motor Drives

Speaker: Alex Lidow

GaN Reliability and Lifetime Projections

Speaker: Alex Lidow

The rapid adoption of GaN devices in many diverse applications calls for continued accumulation of reliability statistics and research into the fundamental physics of failure in GaN devices. This talk presents the strategy used to measure and predict GaN device lifetime based upon tests that force devices to fail under a variety of conditions. This information can be used to create stronger and higher performance products for the industry.

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ECCE Europe 2024

Monday, September 2, 2024 - Friday, September 6, 2024
ECCE Europe 2024
Location:

GaN FET Model Validation Via Experimental Multiple Pulse Test

Speaker: Vincenzo Barba

In power electronics design, validating the electronics switches' models is essential. The most recent transistor in wide-bandgap technology is the Gallium-Nitride FET (GaN FET). Several transistor models are developed to use the GaN FET in converter design. The more accurate device equivalent circuits are based on the Curtice and Angelov model. This paper deals with a model description and experimental validation of a normally-off GaN FET. In the paper, the validation is achieved by overlapping comparisons of the waveforms obtained from the model simulations implemented in LTSpice software with the experimental waveforms. Experimental boards with GaN FET in a half-bridge configuration have been used to test the device, considering fast and slow switching performance. Multiple pulse tests are experimentally conducted to measure the voltage and current waveforms of the GaN FET under test. Various current sensor solutions are explored and compared to sense the transistor current during the turn-on and turn-off transients, such as indirect measurement via a shunt resistor, a Rogowski coil, and a Hall effect current probe. The results obtained allow the converter designer to use the model to simulate complex power converter topologies with satisfactory certainty that the simulated GaN FETs represent an actual operating situation in static and switching conditions.

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PowerUp Conference and Expo

Wednesday, September 18, 2024 - Thursday, September 19, 2024
PowerUp Conference and Expo
Location: Milan, Italy

What a Long Strange Trip It’s Been

Speaker: Alex Lidow

GaN devices have passed the tipping point in several applications as this wonderful wide bandgap semiconductor marches toward the obsolescence of the aging silicon MOSFET. In this keynote there will be a brief trip down memory lane to recount some of the key lessons learned beginning with the power MOSFET’s takeover of the power conversion space from the incumbent bipolar transistor. Similarities and differences will be highlighted as one application after another converts from silicon to GaN transistors. The roadmap for the next few years to be discussed at the end is a reflection of these experiences.

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The 11th IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA)

Monday, November 4, 2024 - Wednesday, November 6, 2024
The 11th IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
Location: Dayton, OH

Visit with the EPC GaN Experts at WiPDA 2024!

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electronica 2024

Tuesday, November 12, 2024 - Thursday, November 14, 2024
electronica 2024
Location: Munich, Germany

See you at electronica 2024!

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