120 volt, 60 milliohm EPC2110 dual enhancement-mode gallium nitride power integrated circuit delivers ultra high frequency switching for exceptional performance in wireless power transfer Class-E amplifier applications.
EL SEGUNDO, Calif. – September 2015 – Efficient Power Conversion Corporation (www.epc-co.com) introduces the EPC2110 as the newest member of EPC’s family of enhancement-mode gallium nitride integrated circuits.
The EPC2110 is a dual (common-source) eGaN® FET configuration in a tiny 1.35 mm x 1.35 mm, 120 VDS, 20 A device with a maximum RDS(on) of 60 milliohms with 5 V applied to the gate. This GaN integrated circuit delivers high performance due to its ultra high switching frequency, extremely low RDS(on), exceptionally low QG and in a very small package.
Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2110 is much smaller and has many times superior switching performance. Circuit applications that benefit from this eGaN IC’s performance include ultra high frequency DC-DC conversion, synchronous rectification, class-D audio amplifiers, and most notably, wireless power transfer.
In 1k piece quantities, the EPC2110 is priced at $1.06 and is immediately available through Digi-Key Corporation.
Design Information and Support for eGaN FETs:
EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters,