By Marco Palma, Director, Motor Drives Systems and Applications, and Maurizio Di Paolo Emilio, Marcom Director, Efficient Power Conversion (EPC)
Gallium nitride (GaN) power devices are enabling a new generation of high-efficiency, high-power-density motor drive systems. Compared with conventional silicon MOSFETs, GaN transistors offer significantly lower gate charge, reduced output capacitance, and very low on-resistance, allowing power converters to operate at much higher switching speeds. As a result, motor inverters based on GaN technology can achieve switching frequencies well above 100 kHz while reducing both conduction and switching losses. These characteristics enable smaller passive components, improved efficiency, and more compact system designs.
Bodo’s Power Systems – May Issue
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