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Our next article in this issue is a review from our experienced audio measurements enthusiast, Stuart Yaniger, and explores the EPC9192 reference design from Efficient Power Conversion (EPC) for the latest EPC2307 eGaN FETs. As his title says, this is a new GaN technology option, encouraging developers to design high-performance Class-D audio amplifiers. EPC has launched the new EPC9192 reference design, enabling high power and high efficiency in a modular design, and the audioXpress review confirms the performance capabilities of the brand’s 200V, EPC2307 eGaN FETs in a ground-referenced, split dual supply single-ended (SE) design, rated to deliver 700W per channel into a 4Ω load. The article also explores why EPC GaN power devices are differentiated through the use of native enhancement-mode lateral GaN-on-silicon High Electron Mobility Transistors (HEMTs), eliminating the need for cascode architectures and the associated RDS(on) penalty at lower voltages. This makes EPC devices particularly competitive in the 15V to 200V range.
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