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Low Voltage GaN Surpasses MOSFETs in AI power density

Low Voltage GaN Surpasses MOSFETs in AI power density

By Alex Lidow, CEO, Efficient Power Conversion (EPC) Alejandro Pozo, Director of Applications Engineering, Efficient Power Conversion (EPC) and Michael De Rooij, GaN Applications Fellow, Efficient Power Conversion (EPC)

Artificial intelligence is integrating into our professional and personal lives at an unprecedented pace. By streamlining software development, tackling complex analytical challenges, and automating routine documentation, AI is no longer just a tool, it’s a fundamental shift in how we create and solve.

These new-generation AI servers come at a cost based in large part on an exponentially increasing demand for power.  The center of this power consumption is the Graphic Processing Unit (GPU) made from billions of microscopic transistors compacted on a silicon substrate with features as small as 20 Å (That’s approximately the width of the DNA molecule’s double helix). The power required to activate these billions of processing agents is going up as fast as their computation capabilities.  In table 1 is an example that uses Nvidia’s published roadmap through 2028.

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