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This interview with Shengke Zhang, Vice President of
Reliability at EPC, explores the development of a fully functional GaN power converter operating at 4 Kelvin. Zhang explains why 4 K is a critical temperature for superconducting and quantum computing research and why GaN HEMTs outperform silicon MOSFETs in cryogenic conditions. He details key engineering challenges, especially wiring and peripherals, and outlines future work on monolithic power stages, system-level reliability for AI, and short-circuit robustness in low-voltage GaN devices.