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Efficient Power Conversion (EPC) eGaN FETs Offer Superior Safe Operating Area Capabilities

eGaN FETs exhibit a positive temperature coefficient across their entire operating range, thus overcoming a performance limitation of the silicon MOSFET.

EL SEGUNDO, Calif.—September 2012 — Efficient Power Conversion Corporation (EPC) is releasing safe operating area (SOA) data for their entire product line of eGaN FETs. The positive temperature coefficient across virtually their entire operating range allows a square SOA limited only by average device temperature.

SOA is an indicator of the device’s ability to transfer heat away from a resistive junction. The more efficient a device is at getting rid of generated heat, the lower thermal resistance and the better the SOA performance.

EPC’s eGaN FETs have many major advantages over the power MOSFET needed for today’s high performance applications. eGaN FET’s offer superior device on-resistance while its positive temperature coefficients inhibit hot spot generation within the die, resulting in superior Safe Operating Area capabilities.

An application note presenting the Safe Operating Area for EPC eGaN FETs is available at: Additionally, EPC is in the process of updating each of its product data sheets to include SOA performance curves.

Additional application and design information for EPC eGaN FETs is available:

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as servers, wireless power transmission, envelope tracking, RF transmission, power-over-ethernet (PoE), solar micro inverters, energy efficient lighting, and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. Visit our web site:

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Press Contact

Efficient Power Conversion Corporation Joe Engle, 310.986.0350 [email protected]