Industry's first eGaN FET Driver simplifies switching design Posted Thursday, June 23, 2011 GaN (Gallium-Nitride) FETs appear poised to eat into silicon FETs market share as switching devices for high-voltage power conversion circuits. By Margery Conner EDN June 20, 2011 Read the article Related articles Dedicated Driver Squeezes Optimal Performance Out Of Enhancement-Mode GaN FETs Podium Session at PCIM Europe Marks New Chapter in GaN Power Device Adoption Si vs. GaN vs. SiC: Which process and supplier are best for my power design? GaN-on-Si Based FETs Foster New Applications Efficient Power Conversion - Enhancement-mode Gallium Nitride Transistor