Efficient Power Conversion - Enhancement-mode Gallium Nitride Transistor Posted Thursday, December 20, 2012 By: Sun Changhua www.digitimes.com.tw December 20, 2012 Read translated article Related articles Si vs. GaN vs. SiC: Which process and supplier are best for my power design? GaN-on-Si Based FETs Foster New Applications GaN-on-Silicon Power Devices: How to Dislodge Silicon-Based Power MOSFETs Podium Session at PCIM Europe Marks New Chapter in GaN Power Device Adoption Accelerated development of eGaN FETs as silicon MOSFET come to the end of the road