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Efficient Power Conversion (EPC) Introduces Family of Commercial High-Lead Enhancement Mode Gallium Nitride (eGaN) FETs

Commercial high-lead versions of EPC’s popular enhancement mode gallium nitride (eGaN) FETs, the EPC2801, EPC2815, and EPC2818, are now available.

EL SEGUNDO, Calif. — October 2013 — (www.epc-co.com) Efficient Power Conversion Corporation (EPC) introduces devices with a high-lead solder termination ideal for applications requiring higher temperature solder. The EPC2801, EPC2815, and EPC2818 feature high-lead content (95% lead, 5% tin) solder terminations.

The EPC2801 is a 100 VDS device with a maximum RDS(ON) of 7 milliohms with 5 V applied to the gate. The EPC2815 is a 40 VDS with a maximum RDS(ON) of 4 milliohms. The EPC2818 is 150 VDS device with a maximum RDS(ON) of 25 milliohms.

Table 1 – Summary of Specification Ratings

In 1k piece quantities, the EPC2801 is priced at $7.51, the EPC2815 is priced at $6.35, and the EPC2818 is priced at $16.25. All products are immediately available through Digi-Key Corporation at https://www.digikey.com/en/supplier-centers/epc

Design Information and Support for eGaN FETs:

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, solar micro inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. Visit our web site: www.epc-co.com.

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eGaN