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ePower Chipset Family for High Power Density Applications Chosen as Bodo’s Power System ‘Product of the Month’

ePower Chipset Family for High Power Density Applications Chosen as Bodo’s Power System ‘Product of the Month’

EPC has introduced a 100 V, 65 A integrated circuit chipset designed for 48 V DC-DC conversion used in high-density computing applications and in 48 V BLDC motor drives for e-mobility, robotics, and drones. The EPC23101 eGaN IC plus EPC2302 eGaN FET offers an ePower Chipset capable of a maximum withstand voltage of 100 V, delivering up to 65 A load current, while capable of switching speeds greater than 1 MHz.

Bodo’s Power Systems
February, 2022
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CES 2022: GaN Technology for the Next Future

CES 2022: GaN Technology for the Next Future

The year 2021 was a transitional year in which the world decided to open its doors to GaN. In this interview with Power Electronics News during CES week, GaN industry experts confirmed that GaN is now proving its superiority over silicon.

Power Electronics News
January, 2022
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GaN Devices for Smaller, Lighter, Smoother Motor Drives

GaN Devices for Smaller, Lighter, Smoother Motor Drives

Today, the permanent magnet motor, also known as DC brushless motor (BLDC), is widely used and offers higher torque capability per cubic inch and higher dynamics when compared to other motors. So far, silicon-based power devices have been dominant in the inverter electronics, but today their performance is nearing their theoretical limits. There is an increasing need for higher power density. Gallium nitride (GaN) transistors and ICs have the best attributes to satisfy these needs.

Power Systems Design
November, 2021
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Motor Driver Applications in Space

Motor Driver Applications in Space

As the outer reaches of the Earth’s atmosphere and space are opened to commercial development, motors will become increasingly important to systems places there for various functions. With the inevitability of manufacturing in space, motors – including their drivers – will take on even more functions. Of equal importance will be the motor drivers selected to drive those motors efficiently and reliably.

Components in Electronics
October, 2021
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LiDAR System Design of ToF Laser Driver with GaN

LiDAR System Design of ToF Laser Driver with GaN

The new gallium nitride (GaN) family aims to deliver time-of-flight (ToF) applications for autonomous cars and 3D sensing across the consumer and industrial sectors. In an interview with EE Times, Alex Lidow, CEO at EPC, highlighted how introducing the eToF Laser Driver family’s for LiDAR system design at a low cost competes with the Mosfet when it comes to LiDAR applications.

EEWeb
September, 2021
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Meeting the Power and Magnetic Design Challenges of Ultra-Thin, High-Power Density 48 V DC-DC Converters for Ultra-Thin Computing Applications

Meeting the Power and Magnetic Design Challenges of Ultra-Thin, High-Power Density 48 V DC-DC Converters for Ultra-Thin Computing Applications

Over the past decade computers, displays, smart phones and other consumer electronics systems have become thinner while also becoming more powerful. As a result, the market continues to increase its demand for thinner power supply solutions with greater power density. This article examines the feasibility of adopting various non-isolated dc-dc step-down topologies for an ultra-thin 48 V to 20 V rated to 250 W. It examines the pros and cons of various non-isolated topologies and how the topology impacts the choice of the power transistors and magnetics, specifically the inductors, as these two components account for the bulk of the losses in a converter. The article also undertakes a detailed analysis of the challenges to design thin inductors for these applications, including examining the factors that drive inductor losses, inductor size, and the design tradeoffs, including the impact on EMI. For this work, an ultrathin multilevel converter topology was selected, built, and tested. The experimental results obtained from this converter were used to further refine the operating setting and component selections that resulted in a peak efficiency exceeding 98%.

Michael de Rooij, EPC
Quentin Laidebeur, Würth Elektronik

IEEE Power Electronics Magazine
September, 2021
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Bodo’s Wide Bandgap Expert Talk - GaN Session - June 2021

Bodo’s Wide Bandgap Expert Talk - GaN Session - June 2021

A roundtable discussion with GaN industry experts hosted by Bodo’s Power Systems. Guests included:

  1. Alex Lidow, CEO and co-founder of Efficient Power Conversion
  2. Doug Bailey, Vice President Marketing & Applications Engineering at Power Integrations
  3. Dilder Chowdhury, Director, Strategic Marketing, Power GaN Technology at Nexperia
  4. Tom Ribarich, Sr. Director Strategic Marketing at Navitas Semiconductor
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The Next Wave of GaN and SiC

The Next Wave of GaN and SiC

Gallium nitride and silicon carbide are designated wide-bandgap (WBG) semiconductors based on the energy required to shift electrons in these materials from the valence to the conduction band — about 3.2 eV for SiC and 3.4 eV for GaN, compared with just 1.1 eV for silicon. The WBG properties lead to a higher applicable breakdown voltage, which can reach up to 1,700 V in some applications. At this year’s digital only PCIM Europe, held in May, several companies showed their latest innovations in GaN and SiC and offered insights on where WBG technology is headed.

EE Times – Europe
July, 2021
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Product roundup: GaN power semiconductors gain traction

(Image: Yole)

Product roundup: GaN power semiconductors gain traction

Manufacturers of GaN power semiconductors showcased their latest products, from 100 V to 650-V devices at PCIM Europe. PCIM Europe showcased several presentations about the benefits and use cases of wide bandgap (WGG) semiconductors, including gallium nitride (GaN) and silicon carbide (SiC). Several manufacturers, including EPC, GaN Systems, Infineon, Nexperia, and STMicroelectronics announced several new families of GaN power semiconductors during the week.

Electronic Products
May, 2021
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