GaN fundamentals: Hybrid structures, HEMT, and substrate choices GaN Talk – Maurizio Di Paolo Emilio Mar 20, 2026 Part 1 of this article series on gallium nitride (GaN) fundamentals described crystal structures and the formation of the two-dimensional electron gas (2DEG), along with material figures of merit and the transition from depletion-mode to enhancement-mode GaN HEMTs. Part 2 will outline hybrid structures and the RDS(on) penalty, as well as provide further details on GaN HEMTs and substrate choices for GaN. It will also make the case for the path to monolithic integration while showing how ohmic contacts, metallization, and packaging advantages are facilitating this design roadmap. EDN Read article Tags: Maurizio Di Paolo Emilio, Director of Global Marketing Communications at EPC