Sep 09, 2020
Alex Lidow, Ph.D., CEO and Co-founder
Efficient Power Conversion (EPC) is increasing the performance distance between the aging silicon power MOSFET and eGaN transistors with 100 V ratings. The new fifth-generation “plus” devices have about 20% lower RDS(on) and increased DC ratings compared with the prior fifth-generation products. This performance boost comes from the addition of a thick metal layer and a conversion from solder balls to solder bars.
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GaN FETs and ICs
Evaluation Boards
The Growing Ecosystem for eGaN FET Power Conversion (How2AppNote 005)
How to Design an eGaN FET-Based Power Stage with an Optimal Layout (How2AppNote 007)