GaN Talk Blog

Back in 2015 Venture Beat published an article on gallium nitride chips taking over from silicon.  In that article I made the assertion that widespread adoption of gallium nitride-based power semiconductors would be possible because GaN FETs would have higher performance AND lower cost than silicon.  Yet, there is still a widespread misconception that GaN has not yet reached that milestone…that is a false myth.  In this blog post, I will attempt to dispel this myth with the caveat that this discussion is limited to devices rated at less than 400 V, as that is the application focus for EPC’s FET and IC products.

It has been more than 12 years since the first GaN-on-Si power transistors started in volume production, and in many applications, such as lidar and space electronics, adoption has been extremely rapid.  But what about other markets such as consumer products, computers, motor drives, and automotive?  Even in each of those areas GaN devices have started to appear in volume as the predicted tipping point of better performance AND lower cost is a reality.