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Term: 数据中心
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Nov 03, 2020

How to Design a Highly Efficient, 2.5 kW, Universal Input Voltage Range, Power Factor Correction (PFC) 400 V Rectifier Using 200 V eGaN® FETs

Alex Lidow, Ph.D., CEO and Co-founder

Acknowledgement - This application note and associated hardware was developed in collaboration with Semiconductor Power Electronics Center (SPEC) at University of Texas at Austin.

Motivation

The expansion of applications such as cloud computing, wearables, machine learning, autonomous driving, and IoT drive us towards an even more data-intensive world, increasing demands on data centers and power consumption [1, 2]. The importance of efficiency, power density, and cost of the AC to DC switching power supply is driving innovative solutions that eGaN FETs can solve to yield ultra-high efficiency power factor correction (PFC) front-end rectifier solutions that are the focus of this how-to-application note.

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