Jan 15, 2026
Michael de Rooij, Ph.D., Vice President, Applications Engineering
Michael A. de Rooij and Alejandro .P. Pozo
This article orginally appeared on EEPower.
Artificial intelligence is now in vogue - and its influence will only continue to grow. Today, the real challenge lies in delivering the energy demands at optimal efficiency levels. NVIDIA recently released a white paper¹ showing that an 800‑volt DC architecture combined with energy storage solutions represents an alternative approach to meeting the needs of modern and future AI server infrastructures. These systems will require power delivery in megawatts, not just kilowatts. The enabling technology is GaN. In collaboration with NVIDIA, EPC has developed a cost-effective, low-profile 800 VDC‑to‑12.5 VDC converter2 capable of delivering up to 6 kW. The design leverages EPC’s latest 150 V and 40 V GaN device3,4, fitting within a footprint of 5,000 mm² and a total thickness of only 8 mm. The design exemplifies how GaN FETs can achieve a combination of high efficiency and high power-density while keeping costs low, aiming to achieve 97% efficiency at full load.
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GaN FETs and ICs
Evaluation Boards
The Growing Ecosystem for eGaN FET Power Conversion (How2AppNote 005)
How to Design an eGaN FET-Based Power Stage with an Optimal Layout (How2AppNote 007)