GaN Talk Blog

At PCIM Asia 2026, EPC presented its Gen 8 monolithic GaN power stage for AI processor power delivery.

Developed by EPC for high-frequency multiphase POL / IVR applications on next-generation AI processors, Gen 8 integrates half-bridge power switches, high-speed gate drivers, bootstrap circuitry, level shifting, and logic on the same GaN die. With lower charge, faster switching, and stronger overvoltage capability, it targets operation from a 6 V input at frequencies approaching the 10 MHz class. The system-level significance is not simply a lower component count: integration reduces drive-loop parasitics and noise sensitivity, while allowing the control side to use high-speed processes better suited to extensive digital functionality, enabling more phases and denser processor-side placement.

In the ever-evolving world of power electronics, where efficiency, size, and reliability are paramount, EPC is setting a new benchmark with its latest innovation: the EPC2366. This 40 V GaN FET, packaged in an ultra-compact 3.3 by 2.6 millimeter QFN footprint, exemplifies the cutting edge of power semiconductor technology.

In an interview with Judith Cheng, Editor at Large at MakerPROTW, Alex Lidow, co-founder and CEO of Efficient Power Conversion (EPC), described the company’s seventh-generation gallium nitride (GaN) technology, now in mass production, and its implications for low-voltage applications that have traditionally been dominated by silicon MOSFETs. With devices such as the 40 V EPC2366 already in volume production, EPC is positioning GaN as a mainstream option for 40 V and below - a market that exceeds the size of the 100 V segment where GaN first gained traction.