GaN Talk Blog

In the ever-evolving world of power electronics, where efficiency, size, and reliability are paramount, EPC is setting a new benchmark with its latest innovation: the EPC2366. This 40 V GaN FET, packaged in an ultra-compact 3.3 by 2.6 millimeter QFN footprint, exemplifies the cutting edge of power semiconductor technology.

In an interview with Judith Cheng, Editor at Large at MakerPROTW, Alex Lidow, co-founder and CEO of Efficient Power Conversion (EPC), described the company’s seventh-generation gallium nitride (GaN) technology, now in mass production, and its implications for low-voltage applications that have traditionally been dominated by silicon MOSFETs. With devices such as the 40 V EPC2366 already in volume production, EPC is positioning GaN as a mainstream option for 40 V and below - a market that exceeds the size of the 100 V segment where GaN first gained traction.