GaN Talk Blog

When wide-bandgap semiconductors entered the market, the areas in which they operated were pretty well defined. SiC would challenge silicon at voltages above 600V, and GaN would compete with silicon in applications from around 100V to 600V.

Power Systems Design
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Alex Lidow, CEO and co-founder of Efficient Power Conversion (EPC), talked with Ally Winning, Editor at Power Systems Design, about EPC's strategic agreement with Renesas in a recent interview. The interview looked at why the deal was made, how important it is to have a second source, and how certain eGaN devices help set de facto standards in the low-voltage GaN market.

The professional audio industry has traditionally prioritized reliability, predictable lifecycles, and long-term product stability when evaluating new semiconductor technologies. As a result, emerging device platforms are typically introduced only after their electrical performance and robustness are well understood.

Against this backdrop, Markus Bätz, CEO and co-founder of Innosonix, made the decision to transition from silicon to gallium nitride (GaN) power devices as early as 2020 - several years before GaN became widely discussed within professional audio circles.

A partnership with Renesas, which offers high-voltage GaN, suggests an opportunity for EPC to broaden its low- and medium-voltage portfolio.

Gallium Nitride (GaN)—a wideband gap semiconductor alongside silicon carbide (SiC)—has emerged as a superior alternative to silicon in next-generation power electronics. Yole—a renowned market research firm—forecasts $ 3 billion in 2030 for the GaN power market, with a remarkable compound growth of 42% between 2024 and 2030, as a result of OEM uptake, consumer maturity, and NVIDIA-supported AI datacenter business expansion.

Power Electronic News
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