Apr 24, 2019
Rick Pierson, Senior Manager, Digital Marketing
The latest generation of 100 V GaN devices increase the efficiency, shrink the size, and reduce system cost for 48 V power conversion. The EPC2045, shown in figure 1, is rated at 100 V with 7 mΩ on- resistance that can carry a continuous current of 16 A. The EPC2045 is nearly one-tenth the footprint of a comparable Si MOSFET and has lower parasitic capacitances and can switch much faster than equivalent silicon devices, yielding lower switching loss even at higher switching frequency.
The EPC2053, shown in figure 2, is rated at 100 V with 4 mΩ on-resistance that can carry a continuous current of 32 A. The EPC2053 has lower parasitic capacitances and on-resistance than its silicon counterparts, yielding faster switching speed and lower power losses even at higher switching frequencies. These characteristics enable increasing the output power while shrinking the volume of the converter.
Oct 07, 2018
Gab-Su Seo1,2, Ratul Das1, and Hanh-Phuc Le11Department of Electrical, Computer, and Energy Engineering, University of Colorado2Power Systems Engineering Center, National Renewable Energy Laboratory, Colorado, U.S.A.
With drastically increasing demands for cloud computing and big data processing, the electric energy consumption of data centers in the U.S. is expected to reach 73 billion kWh by 2020 [1], which will account for approximately 10% of the U.S total electric energy consumption. A large portion of this consumption is caused by losses from inefficient power delivery architectures that require a lot of attention for improvements [2], [3].
Jul 28, 2017
This post was originally published May 26, 2017 on the PowerPulse.net web site . Learn more about eGaN technology and EPC GaN solutions for 48 V to Point-of-Load.
During last week’s PCIM Europe event in Nuremberg, Germany, direct 48V-to-1V power conversion architectures were a significant topic, mostly outside of the exhibit floor. Vicor was quietly showing its latest generation of 48V direct-to-chip power components. Ericsson Power Modules and Efficient Power Conversion were holding invitation-only meetings where future designs of 48V direct to load power conversion architectures were the focus of the discussions. By the end of 2017, several vendors are expected to be offering dc-dc converters delivering 48V-to-1V direct conversion.
Have a question about design examples? Ask a GaN Expert
GaN FETs and ICs
Evaluation Boards
The Growing Ecosystem for eGaN FET Power Conversion (How2AppNote 005)
How to Design an eGaN FET-Based Power Stage with an Optimal Layout (How2AppNote 007)