Oct 09, 2025
Renee Yawger, Director of Marketing
As artificial intelligence (AI), robotics, and space systems redefine what’s possible in power electronics, gallium nitride (GaN) technology continues to lead the transformation. In a recent interview with Electronic Product Design & Test (EPDT), Dr. Alex Lidow, CEO and co-founder of EPC, shared his perspective on how GaN is reshaping the semiconductor landscape — and what’s next for this fast-evolving technology.
Apr 03, 2019
Rick Pierson, Senior Manager, Digital Marketing
The rapid expansion of the computing and telecommunication market is demanding an ever more compact, efficient and high power density solution for intermediate bus converters. The LLC resonant converter is a remarkable candidate to provide a high power density and high-efficiency solution. eGaN® FETs with their ultra-low on-resistance and parasitic capacitances, benefit LLC resonant converters by significant loss reduction that is challenging when using Si MOSFETs. A 48 V to 12 V, 900 W, 1 MHz LLC DC to DC transformer (DCX) converter employing eGaN FETs such as EPC2053 and EPC2024 is demonstrated, yielding a peak efficiency of 98.4% and a power density exceeding 1500 W/in3.
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GaN FETs and ICs
Evaluation Boards
The Growing Ecosystem for eGaN FET Power Conversion (How2AppNote 005)
How to Design an eGaN FET-Based Power Stage with an Optimal Layout (How2AppNote 007)