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Sensitron and EPC Collaborate to Introduce a High-Power Density 350 V Gallium Nitride (GaN) Half Bridge Intelligent Power Module (IPM) That is 60% Smaller Than Comparable Silicon Solutions and Lower C

Categories: Press Releases
Sensitron and EPC Collaborate to Introduce a High-Power Density 350 V Gallium Nitride (GaN) Half Bridge Intelligent Power Module (IPM) That is 60% Smaller Than Comparable Silicon Solutions and Lower C

Sensitron introduces the SPG025N035P1B GaN half-bridge module using the 350 V EPC2050 eGaN® FET from Efficient Power Conversion (EPC)

EL SEGUNDO, Calif.— May 2022, Reducing size and cost were key concerns of Sensitron when designing their latest generation GaN power modules. By replacing traditional silicon FETs with EPC’s 350 V, EPC2050 GaN FET, Sensitron was able to reduce the size of their solution by 60% while also improving the module’s already excellent junction-to-case thermal conduction. The SPG025N035P1B from Sensitron is a high-power density 350 V, 20 A GaN half bridge with an integrated gate drive, optimized for stray inductance and switching performance at 500 khz. Rated at 20 A, the module can be used to control over 3 kW. Sensitron’s proprietary topside cooling technology on this ultra-small, lightweight high power density package (1.10" x 0.70" x 0.14") allows for optimal thermal performance. The SPG025N035P1B was designed for commercial, industrial, and aerospace applications.

The SPG025N035P1B module uses the EPC2050, a 350 V rated GaN FET with 80 mΩ maximum RDS(on), 26 A peak current power in an extremely small chip-scale package that measures just 1.95 mm x 1.95 mm.  The EPC2050 provides Sensitron with a high efficiency solution due to the low switching losses, and a high-power density solution due to the extremely small size. The EPC2050 is also ideal for multi-level converters, EV charging, solar power inverters, lidar, and LED lighting.

“We are delighted to be working with EPC. By using the ultra-small EPC2050 GaN FET, we could design a  350 V half bridge module with higher efficiency and 1/3rd the size of alternative silicon solutions allowing us to capture very high-density applications, commented Richard Locarni, Director of New Business Development, Sensitron.

Alex Lidow, EPC’s CEO added, “This application is a great example of the real benefits that GaN brings. We have worked closely with Sensitron to find the best GaN FET to meet the design challenges that the power-density requirements of their module demands.”

About EPC

EPC is the leader in enhancement mode gallium nitride (eGaN®) based power management. eGaN FETs and integrated circuits provide performance many times greater than the best silicon power MOSFETs in applications such as DC-DC converters, remote sensing technology (lidar), motor drives for eMobility, robotics, and drones, and low-cost satellites.

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eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press contact: Efficient Power Conversion:  Renee Yawger tel: 908.619.9678 email: [email protected]

About Sensitron

Sensitron is a leading manufacturer of high reliability power electronic component solutions for the defense, aerospace, space, and medical markets. Serving the high-reliability market for over 50 years, Sensitron has proven expertise in designing products with rugged, lightweight, and cost-effective solutions for switching power supplies, AC-DC rectification, primary & secondary power distribution, motion control, transient voltage spike protection, and custom applications. Our solutions include the use of wide band gap SiC and GaN modules in power conversion and motion control applications such as inverters, power modules, and motor controls. Sensitron is headquartered in Hauppauge, New York.

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Follow Sensitron on social media: LinkedIn

Press contact: Athanassia Atsalis, tel: 631-586-7600, email:[email protected]