Industry's first eGaN FET Driver simplifies switching design Posted Thursday, June 23, 2011 GaN (Gallium-Nitride) FETs appear poised to eat into silicon FETs market share as switching devices for high-voltage power conversion circuits. By Margery Conner EDN June 20, 2011 Read the article Related articles New gate driver extends TI's family of GaN FET driver ICs National Semiconductor Introduces Industry’s First 100V Half-bridge Gate Driver for Enhancement-mode Gallium-Nitride Power FETs Si vs. GaN vs. SiC: Which process and supplier are best for my power design? The National LM5113 from Texas Instruments has been honored with an Electronic Products’ Product of the Year award Efficient Power Conversion Development Board Demonstrates Ease of Designing Power Systems with 200 V eGaN FETs