EPC2100 GaN power transistor offers power systems designers a solution that increases efficiency and power density for complete buck converter systems approaching 93% at 10 A, and over 90.5% at 25 A when switching at 500 kHz and converting from 12 V to 1.2 V.

EL SEGUNDO, Calif. — September 2014 — EPC announces the EPC2100, the first commercially available enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated. This increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end user’s power conversion system.

Superior characteristics of eGaN^® FETs, such as low output capacitance, low input capacitance, low parasitic inductances, and small size make them ideal for increasing efficiency in highly resonant, Rezence (A4WP) compliant, wireless power transfer systems.

EL SEGUNDO, Calif.—July 2014 — Efficient Power Conversion Corporation (EPC) today announces the immediate availability of a complete demonstration wireless power transfer kit. The 40 V (EPC9111) or 100 V (EPC9112) wireless kits have three components:

eGaN^® power transistors continue to raise the bar for power conversion performance. Lower on-resistance, lower capacitance, higher current, and superior thermal performance enable power converters with greater than 98% efficiency.

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EL SEGUNDO, Calif.—July 2014 — Efficient Power Conversion Corporation (EPC) announces the introduction of six new-generation power transistor products and corresponding development boards. Ranging from 30 V to 200 V, these products provide significant reduction in R_DS(on) greatly increasing their output current capability in applications such as high power density DC-DC converters, Point-of-Load (POL) converters, synchronous rectification in DC/DC and AC/DC converters, motor drives, LED lighting, and industrial automation.

The superior characteristics of eGaN^® FETs, such as low output capacitance, low input capacitance, low parasitic inductances, and small size make them ideal for increasing efficiency in highly resonant, Rezence (A4WP) compliant, wireless power transfer systems.

EL SEGUNDO, Calif.—June, 2014 — Efficient Power Conversion Corporation (EPC) today announce the introduction of demonstration boards for wireless power transfer in an innovative high performance topology; Zero Voltage Switching (ZVS) Class-D. The EPC9506 and EPC9507 amplifier (source) boards utilize the high frequency switching capability of EPC gallium nitride transistors to facilitate wireless power systems with greater than 75% efficiency.

DrGaN^PLUS EPC9202 100 V, 10 A board demonstrates the extreme size reduction and efficiency enhancement for power conversion achieved using high frequency switching eGaN® power transistors

EL SEGUNDO, Calif.— May 2014 — Providing an easy-to-use way for power systems designers to evaluate the exceptional performance of gallium nitride transistors, Efficient Power Conversion Corporation (EPC) introduces DrGaN^PLUS evaluation boards. These boards are proof-of-concept designs that integrate all necessary components of a half-bridge circuit into a single, extremely small PCB-based module that can be readily mounted to demonstrate the excellent performance of a GaN transistor power conversion solution.

EPC9016 development board features 40 V, 33 A enhancement mode gallium nitride (eGaN^®) FETs in parallel operation increasing current capability by 67% and optimum layout techniques maximize efficiency.

EL SEGUNDO, Calif.— April, 2014 — Efficient Power Conversion Corporation (EPC) introduces the EPC9016 half-bridge development board for high current, high step-down voltage, buck Intermediate Bus Converter (IBC) applications using eGaN FETs. In this application two low-side (synchronous rectifier) field effect transistors (FETs) are connected in parallel since they will be conducting for a much longer period compared to the single high side (control) FET.

EPC8010 100 V gallium nitride FET is optimized for high frequency applications with positive gain into the 3 GHz range.

EL SEGUNDO, Calif. – January 2014 – Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN^®) power FETs extends its family of high-speed, high performance transistors with the EPC8010 power transistor. Sold in die form, the EPC8010 is a mere 1.75 mm² with 100 V_DS. Optimized for high speed switching, the EPC8010 has a maximum R_DS(on) of 160 milliohms and input gate charge in the hundreds of pico-coulombs.

EPC9013 development board features 100 V eGaN FETs with a 35 A maximum output current using four half-bridge configuration in parallel and a single onboard gate drive.

EL SEGUNDO, Calif.—February, 2014 — Efficient Power Conversion Corporation (EPC) introduces the EPC9013 development board featuring the 100 V EPC2001 enhancement mode (eGaN®) field effect transistor (FET) operating up to a 35 A maximum output current in Buck mode using a four half-bridge configuration in parallel and a single onboard gate drive. This innovative design increases output power without sacrificing efficiency.

Commercial high-lead versions of EPC’s popular enhancement mode gallium nitride (eGaN) FETs, the EPC2801, EPC2815, and EPC2818, are now available.

EL SEGUNDO, Calif. — October 2013 — (www.epc-co.com) Efficient Power Conversion Corporation (EPC) introduces devices with a high-lead solder termination ideal for applications requiring higher temperature solder. The EPC2801, EPC2815, and EPC2818 feature high-lead content (95% lead, 5% tin) solder terminations.

Power systems and RF designers now have access to high performance GaN power transistors capable of amplification into the low GHz range, enabling innovative designs not achievable with silicon.

EL SEGUNDO, Calif. — September 2013 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs extends its family of high-speed, high performance transistors with the EPC8000 family of products.

EPC2018 gallium nitride power transistor delivers high frequency switching for exceptional performance in DC-DC power conversion and Class D Audio applications.

EL SEGUNDO, Calif. – September 2013 – Efficient Power Conversion Corporation (www.epc-co.com) introduces the EPC2018 as the newest member of EPC’s family of enhancement mode gallium nitride power transistors.

EPC9107 demonstrates size reduction and efficiency enhancement for power conversion achieved using high frequency switching eGaN power transistors

EL SEGUNDO, Calif.—June, 2013 — Efficient Power Conversion Corporation (EPC) introduces the EPC9107, a fully functional buck power conversion demonstration circuit.  This board is a 9 V-28 V input to 3.3 V, 15 A maximum output current, 1MHz buck converter.  It uses the EPC2015< eGaN FET in conjunction with the LM5113 100V half-bridge gate driver from Texas Instruments. The EPC9107 demonstrates the reduced size and performance capabilities of high switching frequency eGaN FETs when coupled with this dedicated eGaN driver.

The EPC9107 demonstration board is 3” square and contains a fully closed-loop buck converter with optimized control loop. The complete power stage including eGaN FETs, driver, inductor and input/output caps is in an ultra compact 0.5” x 0.5” layout to showcase the performance that can be achieved using the eGaN FETs with the LM5113 eGaN driver.

EPC9010 development board features dedicated eGaN driver to facilitate rapid design of high frequency switching power conversion systems using the 100 V EPC2016 eGaN FET

EL SEGUNDO, Calif.— February, 2012 — Efficient Power Conversion Corporation (EPC) introduces the EPC9010 development board to make it easier for engineers to start designing with a 100 V enhancement-mode gallium nitride (eGaN) field effect transistor (FET) in applications such as high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency circuits.

The EPC9010 development board is a 100 V maximum device voltage, 7 A maximum output current, half bridge with onboard gate drives, featuring the EPC2016 enhancement mode (eGaN) field effect transistor (FET). The purpose of this development board is to simplify the evaluation process of eGaN FETs by including all the critical components on a single board that can be easily connected into any existing converter.

EPC9004 features eGaN^® FETs in combination with dedicated GaN FET gate driver from Texas Instruments

EL SEGUNDO, Calif.—February 2013 — Efficient Power Conversion Corporation (EPC) today announced the availability of the EPC9004 development board, featuring EPC’s enhancement-mode gallium nitride (eGaN) field effect transistors (FETs). This board demonstrates how recently introduced IC gate drivers, optimized for GaN FETs, make the task of transitioning from silicon power transistors to higher performance eGaN FETs simple and cost effective.

The EPC9004 development board is a 200 V peak voltage, 2 A maximum output current, half bridge featuring the EPC2012 eGaN FET. The EPC2012 is used in combination with the UCC27611 high-speed gate driver from Texas Instruments, thus reducing time and complexity for designing high frequency, high performance power systems.

EPC9102 showcases the performance that can be achieved using the EPC2001 eGaN FETs and the LM5113 eGaN FET driver from Texas Instruments

EL SEGUNDO, Calif.—May, 2012 — Efficient Power Conversion Corporation (EPC) introduces the EPC9102, a fully functional eighth brick converter. This board is a 36 V – 60 V input to 12 V output, 375 kHz phase-shifted full bridge (PSFB) eighth brick converter with 17 A maximum output current. The EPC9102 uses the 100 V EPC2001 eGaN FETs in conjunction with the recently introduced LM5113 100V half-bridge gate driver from Texas Instruments. The LM5113 is the industry’s first driver to optimally drive and fully release the benefits of enhancement mode gallium nitride FETs. The EPC9102 demonstrates the performance capabilities of high switching frequency eGaN FETs when coupled with this eGaN driver.

EPC9101 demonstrates size reduction and efficiency enhancement for buck power conversion achieved using high frequency switching eGaN power transistors

EL SEGUNDO, Calif.—October 2011 — Efficient Power Conversion Corporation (EPC) introduces the EPC9101, a fully functional buck power conversion demonstration circuit. This board is an 8 V-19 V input to 1.2 V, 18 A maximum output current, 1MHz buck converter. It uses the EPC2014 and EPC2015 eGaN FETs in conjunction with the recently introduced National LM5113 100V half-bridge gate driver from Texas Instruments. The LM5113 is the industry’s first driver designed specifically for enhancement mode gallium nitride FETs. The EPC9101 demonstrates the reduced size and performance capabilities of high switching frequency eGaN FETs when coupled with this dedicated eGaN driver.

EPC9006 facilitates rapid design of high frequency switching power conversion systems based on the 100 V EPC2007 with a ready-made and easy-to-connect development board including well-documented engineering support materials.

EL SEGUNDO, Calif.—September, 2011 — Efficient Power Conversion Corporation (EPC) introduces the EPC9006 development board to make it easier for engineers to start designing with a 100 V enhancement-mode gallium nitride (eGaN) field effect transistor (FET) in applications such as high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency circuits.

EPC2007 delivers high frequency switching with enhanced performance in lead-free, RoHS compliant package.

EL SEGUNDO, Calif. – September, 2011 - Efficient Power Conversion Corporation (www.epc-co.com) announces the introduction of the EPC2007 as the newest member of EPC’s second-generation enhanced performance eGaN FET family. The EPC2007 is environmentally friendly; being lead free, RoHS-compliant (Restriction of Hazardous Substances), and halogen free.

EPC9005 facilitates rapid design of high frequency switching power conversion systems based on the 40 V EPC2014 with a ready-made and easy-to-connect development board including well-documented engineering support materials.

EL SEGUNDO, Calif.—August 2011 — Efficient Power Conversion Corporation (EPC) introduces the EPC9005 development board to make it easier for users to start designing with a 40 V enhancement-mode gallium nitride (eGaN) field effect transistor (FET) in applications such as high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency circuits.

EPC2014 delivers high frequency switching with enhanced performance in lead-free, RoHS compliant package.

EL SEGUNDO, Calif. – August 2011 - Efficient Power Conversion Corporation (www.epc-co.com) announces the introduction of the EPC2014 as the newest member of EPC’s second-generation enhanced performance eGaN FET family. The EPC2014 is environmentally friendly; being lead free, RoHS-compliant (Restriction of Hazardous Substances), and halogen free.