EPC9099 - Development Board

EPC9099: 200 V, 15 A Half-Bridge Development Board

EPC9099 Development Board

The EPC9099 development board is a 200 V maximum device voltage, 15 A maximum output current, half bridge with onboard gate drives, featuring the EPC2215 enhancement mode (eGaN®) field effect transistor (FET).

The EPC9099 development board is 2” x 2” and contains two EPC2215 eGaN FETs in a half bridge configuration using the Texas Instruments LMG1210 gate driver.

To simplify the evaluation process of the EPC2215 GaN FET, all the critical components are included on a single board that can be easily connected into any existing converter. Video: How to Turn an EPC Development Board into a Prototype

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EPC9099 Parameters Table
(1) Maximum input voltage depends on inductive loading, maximum switch node ringing must be kept under 200 V for EPC2215.
(2) Maximum current depends on die temperature – actual maximum current with be subject to switching frequency, bus voltage and thermal cooling.
(3) Limited by time needed to ‘refresh’ high side bootstrap supply voltage.